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| description the irf7738l2tr(1)pbf combines the latest hexfet? power mosfet silicon technology with the advanced directfet ? packaging to achieve the lowest on- state resistance in a package that has the footprint of a dpak (to-252aa) and only 0.7 mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniques, wh en application note an- 1035 is followed regarding the manufacturing methods and processes. the directfet package allows dual sided cooling to maximize thermal transfer. this hexfet power mosfet is designed for applications where efficiency and power density are essential. the advanced directfet ? packaging platform coupled with the latest silicon technology allows the irf7738l2tr(1)pbf to offer substantial system level savings and performan ce improvement specifically in motor drive, high frequency dc-dc and other heavy load applications. this mosfet utilizes the latest processing techniques t o achieve low on-resistance and low qg per silicon area. additional features of this mosfet are 175c operating junction temperature and high repetitive pe ak current capability. these features combine to make this mosfet a highly efficient, robust and reliable device for high current applications. applicable directfet ? outline and substrate outline directfet power mosfet directfet isometric hexfet ? is a registered trademark of international rectifier. features ? ? ? ! "# $ ? $ ? $ ? %" ? & ' & '% &' ? & " absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure t o absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under boa rd mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. d d g s ss sss sb sc m2 m4 l4 l6 l8 v (br)dss 40v r ds(on) typ. 1.2m ? max. 1.6m ? i d (silicon limited) 184a q g 129nc parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) i d @ t a = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation p d @t a = 25c power dissipation e as single pulse avalanche energy (thermally limited) e as (tested) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t p peak soldering temperature t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 45 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? r jcan junction-to-can ??? 1.6 r j-pcb junction-to-pcb mounted ??? 0.5 linear derating factor w/c max. 184 130 736 538 134 40 20 315 0.63 35 94 3.3 270 -55 to + 175 see fig.18a, 18b, 16, 17 v a mj c/w w c ( $$$) ) *+,(-. & "%' #'/ # ' % (0+,(- note form q uantity irf7738l2trpbf directfet2 large can tape and reel 4000 "tr" suffix irf7738l2tr1pbf directfet2 large can tape and reel 1000 "tr 1" suffix eol notice #264 part number package t ype standard pack $$$) ) *+,(-. & "%' #'/ # ' % (0+,(- + surface mounted on 1 in. square cu (still air). with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) notes through are on page 9 d s g static characteristics @ t j = 25c (unless otherwise stated) parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e 40 ??? ??? v ? v (br)dss / ? t j breakdown volta g e temp. coefficient ??? 0.02 ??? v/c r ds(on) static drain-to-source on-resistance ??? 1.2 1.6 m ? v gs(th) gate threshold volta g e 2.0 3.0 4.0 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -8.4 ??? mv/c gfs forward transconductance 113 ??? ??? s r g gate resistance ??? 1.0 ??? ? i dss drain-to-source leaka g e current ??? ??? 5 ??? ??? 250 i gss gate-to-source forward leaka g e ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 dynamic characteristics @ t j = 25c (unless otherwise stated) parameter min. t y p. max. units q g total gate char g e ??? 129 194 q gs1 pre-vth gate-to-source charge ??? 27 ??? q gs2 post-vth gate-to-source charge ??? 10 ??? see fig.11 q gd gate-to-drain ("miller") char g e ??? 45 ??? q godr gate charge overdrive ??? 47 ??? q sw switch charge (q gs2 + q gd ) ??? 55 ??? q oss output charge ??? 54 ??? nc t d(on) turn-on dela y time ??? 21 ??? t r rise time ??? 77 ??? t d(off) turn-off dela y time ??? 39 ??? t f fall time ??? 38 ??? c iss input capacitance ??? 7471 ??? c oss output capacitance ??? 1640 ??? c rss reverse transfer capacitance ??? 737 ??? c oss output capacitance ??? 5936 ??? c oss output capacitance ??? 1465 ??? c oss eff. effective output capacitance ??? 2261 ??? diode characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units i s continuous source current (body diode) a i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 50 75 ns q rr reverse recovery charge ??? 68 102 nc i f = 109a, v dd = 20v di/dt = 100a/s i s = 109a, v gs = 0v i d = 109a v ds = 16v, v gs = 0v v dd = 20v, v gs = 10v i d = 109a r g = 1.8 ? ? = 1.0mhz v gs = 0v, v ds = 0v to 32v conditions na conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 109a v ds = 40v, v gs = 0v, t j = 125c v gs = -20v p-n junction diode. mosfet symbol conditions v gs = 0v v ds = 25v showing the integral reverse v gs = 0v, v ds = 1.0v, f=1.0mhz v gs = 0v, v ds = 32v, f=1.0mhz ??? ??? 184 736 pf v ds = v gs , i d = 250a ??? ??? a nc ns v ds = 10v, i d = 109a v ds = 20v, v gs = 10v v gs = 20v v ds = 40v, v gs = 0v $$$) ) *+,(-. & "%' #'/ #' % (0+,(- 0 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical on-resistance vs. gate voltage fig 4. typical on-resistance vs. drain current fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 60s pulse width tj = 25c 4.5v 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = -40c tj = 25c tj = 175c v ds = 25v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 109a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 1 2 3 4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 109a t j = 25c t j = 125c 5 30 55 80 105 130 155 180 205 i d , drain current (a) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c vgs = 10v $$$) ) *+,(-. & "%' #'/ # ' % (0+,(- - fig 7. typical threshold voltage vs. junction temperature fig 8. typical source-drain diode forward voltage fig 9. typical forward transconductance vs. drain current fig 10. typical capacitance vs.drain-to-source voltage fig.11 typical gate charge vs.gate-to-source voltage fig 12. maximum drain current vs. case temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.5 2.5 3.5 4.5 5.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a id = 10ma id = 1.0ma id = 250a 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = -40c tj = 25c tj = 175c v gs = 0v 0 20 40 60 80 100 120 140 160 i d ,drain-to-source current (a) 0 50 100 150 200 250 300 350 400 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380s pulse width 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 25 50 75 100 125 150 175 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v vds= 8v i d = 109a 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 140 160 180 200 i d , d r a i n c u r r e n t ( a ) $$$) ) *+,(-. & "%' #'/ #' % (0+,(- 1 fig 14. maximum avalanche energy vs. temperature fig 13. maximum safe operating area fig 15. maximum effective transient thermal impedance, junction-to-case fig 16. typical avalanche current vs.pulsewidth 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 17a 29a bottom 109a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.00399 18.81517 0.81430 0.03055 0.15982 0.00014 0.62239 0.00402 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 0.10 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by rds(on) tc = 25c tj = 175c single pulse 100sec 1msec 10msec dc $$$) ) *+,(-. & "%' #'/ # ' % (0+,(- 2 fig 17. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 16, 17: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 18a, 18b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 16, 17). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 15) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as fig 19a. gate charge test circuit fig 19b. gate charge waveform v ds 90% 10% v gs t d(on) t r t d(off) t f fig 20a. switching time test circuit fig 20b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 1k vcc dut 0 l s 20k 1 0.1 % + - 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 109a $$$) ) *+,(-. & "%' #'/ #' % (0+,(- 3 ? please see an-1035 for directfet ? assembly details and stencil and substrate design recommendations g = gate d = drain s = source g d s d d d d d ss s s s $$$) ) *+,(-. & "%' #'/ # ' % (0+,(- 4 ? please see an-1035 for directfet ? assembly details and stencil and substrate design recommendations directfet ? part marking note: for the most current drawing please refer to ir website at http://www.irf.com/package/ l1 0.159 3.95 4.05 0.155 l2 0.214 5.35 5.45 0.210 code a b c d e f g h j k l m r p 0.017 0.029 0.003 0.007 0.057 0.104 0.236 0.048 0.026 0.024 max 0.360 0.280 0.38 0.68 0.02 0.09 1.35 2.55 5.90 1.18 0.55 0.58 min 9.05 6.85 0.42 0.74 0.08 0.17 1.45 2.65 6.00 1.22 0.65 0.62 max 9.15 7.10 0.015 0.027 0.003 0.001 0.100 0.053 0.232 0.046 0.023 0.022 min 0.270 0.356 metric imperial dimensions 0.98 1.02 0.73 0.77 0.040 0.039 0.030 0.029 gate marking part number logo batch number date code line above the last character of the date code indicates "lead-free" $$$) ) *+,(-. & "%' #'/ #' % (0+,(- 5 directfet ? tape & reel dimension (showing component orientation). loaded tape feed direction note: controlling dimensions in mm code a b c d e f g h imperial min 4.69 0.154 0.623 0.291 0.283 0.390 0.059 0.059 max 12.10 4.10 16.30 7.60 7.40 10.10 n.c 1.60 min 11.90 3.90 15.90 7.40 7.20 9.90 1.50 1.50 metric dimensions max 0.476 0.161 0.642 0.299 0.291 0.398 n.c 0.063 note: controlling dimensions in mm std reel quantity is 4000 parts. (ordered as irf7738l2trpbf). for 1000 parts on 7" reel, order irf7738l2tr1pbf reel dimensions max n.c n.c 0.520 n.c 3.940 0.880 0.720 0.760 imperial min 330.00 20.20 12.80 1.50 99.00 n.c 16.40 15.90 standard option (qty 4000) code a b c d e f g h max n.c n.c 13.20 n.c 100.00 22.40 18.40 19.40 min 12.992 0.795 0.504 0.059 3.900 n.c 0.650 0.630 metric $$$) ) *+,(-. & "%' #'/ # ' % (0+,(- (, msl1 (per jedec j-std-020d ??? ) rohs compliant qualification information ? qualification level industrial ?? (per jedec jesd47f ??? guidelines) yes moisture sensitivity level dfet2 comments: this family of products has passed jedec?s industrial qualification. ir?s consumer qualification level is granted by extension of the higher industrial level. qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. click on this section to link to the appropriate technical paper. click on this section to link to the directfet ? website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.022mh, r g = 50 ? , i as = 109a. pulse width 400s; duty cycle 2%. used double sided cooling, mounting pad with large heatsink. mounted on minimum footprint full size board with metalized back and with small clip heatsink. r is measured at t j of approximately 90c. !" "# $" %% &'(()))"*()&+" ( date comments 2/12/2014 ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #264). ? updated data sheet with new ir corporate template. revision history |
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